Magnetoresistance of GaP0.4As0.6 Whiskers in Vicinity of MIT
| Authors | A.A. Druzhinin , N.S. Liakh-Kaguy , I.P. Ostrovskii , Yu.M. Khoverko |
| Affiliations |
Lviv Polytechnic National University, 12, S. Bandera St., 79013 Lviv, Ukraine |
| Е-mail | druzh@polynet.lviv.ua |
| Issue | Volume 11, Year 2019, Number 4 |
| Dates | Received 03 May 2019; revised manuscript received 05 August 2019; published online 22 August 2019 |
| Citation | A.A. Druzhinin, N.S. Liakh-Kaguy, I.P. Ostrovskii, Yu.M. Khoverko, J. Nano- Electron. Phys. 11 No 4, 04007 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(4).04007 |
| PACS Number(s) | 73.43.Qt, 71.30. + h |
| Keywords | Whiskers (3) , Negative magnetoresistance, Hopping conduction, Spin-dependent scattering. |
| Annotation |
The magnetoresistance of GaP04As06 whiskers doped with silicon with a concentration of acceptor impurity in the range of Na 1 1017 5 1018 сm – 3 was investigated. The study of the magnetoresistance of GaAs whiskers at cryogenic temperatures gives information on the nature of low-temperature conductivity in such crystals, and can also be used to create magnetic field sensors with a magnetoresistive principle of action. It is interesting to investigate the magnetotransport properties of GaPxAs1 – x solid solution. The purpose of this work was to study the magnetic support of GaP0.4As0.6 whiskers doped with silicon with a concentration of acceptor impurity in the range of Na 1 1017 5 1018 сm – 3 at low temperatures. The composition of the solid solution was chosen from the point of view of the change in the band structure of the varizonic semiconductor. The concentration of charge carriers in crystals was in the vicinity of the metal- insulator transition (MIT). In this work, the transverse and longitudinal magnetoresistances of the whiskers were studied in the range of 4.2-77 K in magnetic fields up to 12 T. For most samples, the exponential temperature dependence of the resistance is obtained, which corresponds to the dielectric side of the MIT. It is established that in the transverse and longitudinal magnetic fields the field dependence of the magnetoresistance of the crystals is quadratic and is determined mainly by the conductivity of localized A+ states of the upper Hubbard zone. However, at low temperatures of 4.2-50 K, a negative magnetoresistance (up to 7 %) in weak magnetic fields (up to 4.5 T) was detected in GaP0.4As0.6 whiskers. A critical magnetic field was determined, in which a transition from negative to positive magnetoresistance occurs. It is shown that the magnitude of the critical magnetic field depends on the temperature and nature of the application of the magnetic field. The possible reasons for the appearance of a negative magnetic resistivity were analyzed: dimensional effect, distribution of impurities in the whiskers. The obtained results indicate that the mesoscopic dimensional effect does not appear in the studied samples due to sufficiently large crystal sizes. The results of mass spectroscopic studies have established a homogeneous distribution of impurities indicating the absence of clusters in the samples. The obtained negative magnetoresistance was probably connected with antiferromagnetic exchange interaction of the magnetic moments of charge carriers in the process of their hopping conductance on the delocalized states of the upper Hubbard zone. |
|
List of References |
Other articles from this number
1) X-ray Spectral Investigation of SiO2/TiO2/C Nanocomposites [04001-1-04001-4]2) The Structural Studies of Phase Transitions in the Graphite Intercalation Compounds with Iodine Chloride and Bromine [04002-1-04002-6]
3) Influence of Substrate Temperature on the Formation of Titanium Carbide Film [04003-1-04003-5]
4) Theoretical Analysis of Thermal Conductivity of Polymer Systems Filled with Carbon Nanotubes [04004-1-04004-6]
5) Electrical Characteristics of Au/n-GaN Schottky Junction with a High-k SrTiO3 Insulating Layer [04005-1-04005-5]
6) Nanoporous Structure of the Ammonium Nitrate Granules at the Final Drying: The Effect of the Dryer Operation Mode [04006-1-04006-4]
7) Simulation of Guard Ring Type Effects on the Electrical Characteristics of n-on-p Planar Silicon Detectors [04008-1-04008-6]
8) Watershed Segmentation Image Processing Analysis of Zn0.97Fe0.03O Dilute Magnetic Semiconductor [04009-1-04009-3]
9) Microstructural Features and Tribological Behaviour of Low-Alloyed Steel Modified by High-Energy Plasma Pulse [04010-1-04010-5]
10) Design and Analysis of Ternary D-Latch Using CNTFETs [04011-1-04011-5]
11) Surface Nanostructure of Layers from Water Solutions after Sedimentation [04012-1-04012-6]
12) Solutions of Two-dimensional Schrodinger Equation in Symmetries of Extended Quantum Mechanics for the Modified Pseudoharmonic Potential: an Application to Some Diatomic Molecules [04013-1-04013-7]
13) Investigation of Localized Charges on Linearity and Distortion Performance of Ferroelectric Dual Material Gate All Around TFETs [04014-1-04014-6]
14) Band Gap Engineering in Spray Pyrolysis Grown Nanocrystalline NiO Thin Films by Fe Doping [04015-1-04015-6]
15) Single-walled Boron Nitride Pores as Media for Hydrogen Storage: DFT and IGM Study [04016-1-04016-7]
16) Synthesis and Characterization of Hybrid Chitosan/magnetite Nanocomposite Fluid [04017-1-04017-5]
17) New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability [04018-1-04018-6]
18) Nanostructured Coatings Based on Amorphous Carbon and Gold Nanoparticles Obtained by the Pulsed Vacuum-arc Method [04019-1-04019-7]
19) X-ray Analysis of NiCrxFe2 – xO4 Nanoparticles Using Debye- Scherrer, Williamson-Hall and Size-strain Plot Methods [04020-1-04020-8]
20) BSIM3v3 Characterization and Simulation of MOS Si1 – xGex Transistors with 130 nm Submicron Technology [04021-1-04021-6]
21) An Analogue Multiplier Using Carbon Nanotube Field-effect Transistor Technology [04022-1-04022-5]
22) Computer Simulation of the Electrotransport Characteristics of the “Au – Bipyridine – Au” Nanocontact [04023-1-04023-5]
23) Nonrelativistic Bound State Solutions of the Modified 2D-Killingbeck Potential Involving 2D-Killingbeck Potential and Some Central Terms for Hydrogenic Atoms and Quarkonium System [04024-1-04024-8]
24) Effect of the Temperature Change of Material Test Reactor on Calibration of Cluster Dynamics for Neutron Irradiation Pure Iron [04025-1-04025-4]
25) Elastic Properties of Au, Ag, and Core-shell Au@Ag Nanorods from Molecular Dynamics Simulations [04026-1-04026-5]
26) Nanopowder and Thin Films of ZnO by Sol Gel Approach [04027-1-04027-5]
27) The Effects of Al-doped ZnO (AZO) as Anti-reflection Agent for Dye Sensitized Solar Cells System [04028-1-04028-5]
28) Operating Temperature Effect on the Thin Film Solar Cell Efficiency [04029-1-04029-5]
29) Extraction of Diode’s Electrical Parameters under Forward and Room Temperature Conditions in an InAsSb Based Device [04030-1-04030-6]
30) Research of Photoluminescence Spectra of ZnSXSe1 – X:Mn Nanocrystals Obtained by Method of Self-propagating High-temperature Synthesis [04031-1-04031-5]
31) Nonlinearity of Diffusion Resistors at High-density Current [04032-1-0432-5]
32) Research of Heat Transfer Mechanisms in Glasses Using Modulation Polarimetry Technique [04033-1-04033-4]
33) Ab Initio Modeling of Boron Impurities Influence on the Electronic and Atomic Structure of Titanium Carbide [04034-1-04034-4]
34) Ferromagnetism of Iron-copper Nanocomposites [04035-1-04035-5]
35) Quantum Confinement Features in EPR and UV-vis Spectra of Al/Au Nanosystems [04036-1-04036-4]
36) Searching for Order Parameter of Low-temperature Phase Transitions in Divalent Nitrates [04037-1-04037-3]
