Effect of Ultrasound on the Energy Spectrum of Electrons and Holes Heterosystem in InAs / GaAs Quantum Dots of InAs

Authors R.M. Peleshchak , O.V. Kuzyk , O.O. Dan’kiv

Ivan Franko Drohobych State Pedagogical University, 24, Ivan Franko st., 82100 Drohobych, Ukraine

Е-mail dankivolesya@ukr.net
Issue Volume 8, Year 2016, Number 4
Dates Received 08 July 2016; published online 23 December 2016
Citation R.M. Peleshchak, O.V. Kuzyk, O.O. Dan’kiv, J. Nano- Electron. Phys. 8 No 4(2), 04064 (2016)
DOI 10.21272/jnep.8(4(2)).04064
PACS Number(s) 61.46. – w, 73.21.La
Keywords Quantum dot (12) , Ultrasound (3) , Deformation (8) , Energy of electron and hole.
Annotation On the basis of the method of electron-deformation relation and perturbation theory the model of heterostructure with spherical quantum dots which is exposed to ultrasound is developed. Within this model it is investigated the influence of the acoustic wave on the ground state energy of electron and hole, the band gap energy and energy of recombination radiation of InAs/GaAs heterostructure with InAs spherical quantum dots. The offered model considers the distortion of the form of quantum dot and its volume change under the influence of the acoustic wave.

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