Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

Authors T.D. Dongale1 , K.V. Khot2, S.V. Mohite3, S.S. Khandagale4, S.S. Shinde3, V.L. Patil3, S.A. Vanalkar3, A.V. Moholkar3, K.Y. Rajpure3, P.N. Bhosale2, P.S. Patil3, P.K. Gaikwad4, R.K. Kamat4

1 Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur- 416004, India

2 Department of Chemistry, Shivaji University, Kolhapur 416004, India

3 Department of Physics, Shivaji University, Kolhapur 416004, India

4 Department of Electronics, Shivaji University, Kolhapur, 416004, India

Issue Volume 8, Year 2016, Number 4
Dates Received 18 June 2016; published online 29 November 2016
Citation T.D. Dongale, K.V. Khot, S.V. Mohite, et al., J. Nano- Electron. Phys. 8 No 4(1), 04030 (2016)
DOI 10.21272/jnep.8(4(1)).04030
PACS Number(s) 73.22. – f; 07.05.Tp.
Keywords RRAM (3) , Thermal reaction model (2) , Reliability (8) , Nanoelectronics (3) .
Annotation In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.

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