The Spectrum of Transverse Acoustic Phonons in Planar Multilayer Semiconductor Nanostructures

Authors I.V. Boyko1 , A.M. Gryschuk2

1 Ternopil National Technical University, 56, Ruska st., 46001 Ternopil, Ukraine

2 Zhytomyr Ivan Franko State University, 40, Velyka Berdichevska st., 10033 Zhytomyr, Ukraine

Е-mail [email protected]
Issue Volume 8, Year 2016, Number 4
Dates Received 04 July 2016; published online 29 November 2016
Citation I.V. Boyko, A.M. Gryschuk, J. Nano- Electron. Phys. 8 No 4(1), 04001 (2016)
DOI 10.21272/jnep.8(4(1)).04001
PACS Number(s) 73.21.Fg, 68.65.Ac, 68.65.Cd
Keywords Quantum cascade laser (3) , Quantum cascade detector, Resonant tunnel structure, Acoustic phonons, Transfer matrix.
Annotation Based on the elastic continuum model, the theory of displacement of acoustic phonons spectra, arising in flat semiconductor nanostructures, was developed. For the studied resonant tunneling structure, which can be an active element of a quantum cascade laser or detector, the spectrum of acoustic phonons modes has been calculated. The dependences of the acoustic phonon spectrum from geometric parameters of studied nanostructure were set. The results obtained in the paper can be used to further theoretical studies of the electrons interaction with the transverse acoustic phonons in multilayer semiconductor nanosystems.

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