Boron Monolayer χ3-type. Formation of the Vacancy Defect and Pinhole

Authors E.V. Boroznina , O.A. Davletova , I.V. Zaporotskova

Volgograd State University, 100, Universitetskij prosp., 400062 Volgograd, Russia

Issue Volume 8, Year 2016, Number 4
Dates Received 17 July 2016; revised manuscript received 24 November 2016; published online 30 November 2016
Citation E.V. Boroznina, O.A. Davletova, I.V. Zaporotskova, J. Nano- Electron. Phys. 8 No 4(2), 04054 (2016)
DOI 10.21272/jnep.8(4(2)).04054
PACS Number(s) 61.72.jd, 75.70.Ak
Keywords Boron monolayer, Pinhole, Vacancy formation, Theoretical research.
Annotation This research is focused on a local vacancy defect formation and pinholes formation in a two-dimensional boron structure – boron monolayer 3 - type. The main characteristics of defects formation have been carried out by using the semi-empirical quantum-chemical scheme MNDO. The variants of atomic configurations which give pinholes defect have been found.

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