Modeling of Output Parameters of the Silicon Solar Cells with i-Type Conductivity Base Crystals

Authors M.V. Kirichenko
Affiliations National Technical University “Kharkov Polytechnic Institute”, 21, Frunze Str., 61002 Kharkiv, Ukraine
Issue Volume 6, Year 2014, Number 4
Dates Received 04 June 2014; revised manuscript received 26 November 2014; published online 29 November 2014
Citation M.V. Kirichenko, J. Nano- Electron. Phys. 6 No 4, 04027 (2014)
PACS Number(s) 89.30.CC, 72.40. + w
Keywords Solar cell (51) , Modeling (20) , Output parameters.
Annotation It was carried out the experimental investigation and modeling of the solar cells based on single crystal silicon with i-type conductivity laboratory samples output parameters using PC1D program. It has been found that use of i-type conductivity base crystals under AM0 irradiation allows to reach the record high photocurrent density values up to 48.6 mA/cm2. However, their efficiency does not exceed 11.6 %. To develop the physically based approach to optimize construction-technological solutions it has been analyzed the electronic model of silicon solar cells with p+-i-n+ structure. During the testing of the model we have obtained a series of diagrams with distribution of the investigated solar cells with p+-i-n+ structure efficiency values, depending on the values of series and shunt resistances at the diode saturation current density of 10 – 7 A/cm2 and 10 – 8 A/cm2 10 – 9 A/cm2. Availability of these diagrams during the development of such type highly effective solar cells will not only significantly reduce the cost of exploratory research but also will produce the required in each particular case an optimum ratio between the costs of diode structure improving and increased level of such devices efficiency.

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