Optical and Recombination Losses in Thin Film Solar Cells Based on Heterojunctions n-ZnS (n-CdS) / p-CdTe with Current Collecting Contacts ITO and ZnO

Authors O.A. Dobrozhan , A.S. Opanasyuk , V.V. Grynenko
Affiliations

Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, Ukraine

Е-mail [email protected]
Issue Volume 6, Year 2014, Number 4
Dates Received 18 June 2014; revised manuscript received 30 June 2014; published online 29 November 2014
Citation O.A. Dobrozhan, A.S. Opanasyuk, V.V. Grynenko, J. Nano- Electron. Phys. 6 No 4, 04035 (2014)
DOI
PACS Number(s) 84.60.Jt, 73.61.Ga
Keywords Thin films solar cells, n-CdS / p-CdTe, n-ZnS / p-CdTe, Optical losses, Recombination losses, Efficiency (24) .
Annotation The optical and recombination losses in auxiliary and absorbing layers of solar cells based on heterojunctions n-ZnS / p-CdTe and n-CdS / p-CdTe with current collecting front sublayers ITO and ZnO were determined. As a result, spectral dependence of light transmittance (T) of solar cells, taking into account its reflections from the boundaries of the contacting materials and in case of absorption in the auxiliary layers of solar cells was calculated. The influence of optical and recombination losses in the solar cell structure ITO (ZnO) / CdS (ZnS) / CdTe on the short circuit current (Jsc) and efficiency (η) of solar cells with different thickness of the window layer CdS (ZnS) (50-300 nm) and constant current collecting layer (200 nm) was investigated. It has been established that the greatest efficiency values (15,9-16,1%) solar cells have the structure of ZnO / ZnS / CdTe at a concentration of uncompensated acceptors in the absorbent layer (Na – Nd) = 1015-1017 cm – 3 and the window layer thickness of 50 nm.

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