Influence of Electron Irradiation on Optical Properties of ZnSe Thin Films

Authors P. Raghu1, C.S. Naveen1, K. Mrudula1, Sanjeev Ganesh2, J. Shailaja1, H.M. Mahesh1

1 Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore – 560056 Karnataka, India

2 Microtron Centre, Mangalore University, Mangalagangothri, Mangalore – 574199 Karnataka, India

Issue Volume 6, Year 2014, Number 4
Dates Received 05 July 2014; revised manuscript received 17 July 2014; published online 29 November 2014
Citation P. Raghu, C.S. Naveen, K. Mrudula, et al., J. Nano- Electron. Phys. 6 No 4, 04007 (2014)
PACS Number(s) 61.80.Fe, 81.15.Jj, 78.30.Fs, 78.66. – w
Keywords E – beam Evaporation, Optical properties (22) , Electron radiation, Thin films (60) , ZnSe (10) .
Annotation Zinc Selenide (ZnSe) thin films of 500 nm thickness were deposited by electron beam evaporation technique and irradiated with 8 MeV electron beam for the doses ranging from 0 Gy to 1 kGy. Optical properties were studied for both irradiated and pristine samples using Ultraviolet-Visible spectrophotometer. The increase in electron dose tends to decrease in transmittance and increase in refractive index of thin film. Irradiated thin film exhibits minimum of 67 % transmittance for 800 Gy with very high absorption of optical energy at 550 nm wavelength. The samples irradiated > 800 Gy tends to redeem the pristine properties. Optical band gap for irradiated thin film were direct and in the range of 2.66 – 2.69 eV.

List of References