GaN Low-dimensional Structures

Authors А.F. Dyadenchuk , V.V. Kidalov

Berdyansk State Pedagogical University, 4, Shmydta, 71100 Berdyansk, Ukraine

Issue Volume 6, Year 2014, Number 4
Dates Received 13 May 2014; published online 29 November 2014
Citation А.F. Dyadenchuk, V.V. Kidalov, J. Nano- Electron. Phys. 6 No 4, 04043 (2014)
PACS Number(s) 61.43Gt, 78.30Fs, 78.55m
Keywords Nitridation method, Quantum dots (3) .
Annotation The GaN low-dimensional structures obtained by nitridation of GaAs porous layers were investigated for the first time. The process of GaN quantum dots formation on the GaAs surface was considered. This process was a result of electrochemical etching of GaAs followed by treatment in atomic nitrogen environment. Nitrogen atoms, which were deposited on the GaAs surface, replace arsenic ones that lead to the formation of a thin GaN layer on the GaAs surface. The photoluminescence and surface morphology of the structures obtained were studied by scanning electron spectroscopy.

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