Electrical and Photoelectrical Properties of Porous Silicon Modified by Cobalt Nanoparticles

Authors I.B. Olenych
Affiliations

Ivan Franko National University of Lviv, 50, Dragomanov Str., 79005 Lviv, Ukraine

Е-mail [email protected]
Issue Volume 6, Year 2014, Number 4
Dates Received 19 May 2014; published online 29 November 2014
Citation I.B. Olenych, J. Nano- Electron. Phys. 6 No 4, 04022 (2014)
DOI
PACS Number(s) 73.63. – b, 73.50.Pz
Keywords Porous silicon (3) , Cobalt nanoparticles, Current-voltage characteristics (3) , Photoresponse, Spectral characteristics.
Annotation In this work, the electrical and photovoltaic properties of sandwich structures based on porous silicon modified by cobalt nanoparticles were investigated. The increase of electrical conductivity, photovoltage and photocurrent of experimental structures was detected for the case of introduction of cobalt into the porous silicon matrix. The spectral characteristics of photoresponse of the barrier structures in the 450-1100 nm wavelength range were studied. The temperature dependences of photovoltage and energy characteristics of the structures based on porous silicon modified by cobalt nanoparticles were measured. The results extend the perspectives of porous silicon in photoelectronics and sensor electronics.

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