Temperature Dependences of the Electron Energy in AlxGa1 – xAs / GaAs / AlxGa1 – xAs Nanofilms of Different Thickness and Composition of the Barrier Material

Authors D.V. Kondryuk, V.M. Kramar

Yuriy Fed’kovych Chernivtsi National University, 2, Kotsiubynskogo Str., 58012 Chernivtsi, Ukraine

Issue Volume 6, Year 2014, Number 4
Dates Received 04 July 2014; revised manuscript received 24 November 2014; published online 29 November 2014
Citation D.V. Kondryuk, V.M. Kramar, J. Nano- Electron. Phys. 6 No 4, 04032 (2014)
PACS Number(s) 73.21.Fg
Keywords Nanoheterostructure (2) , Quantum well (6) , Electron (76) , Energy (51) .
Annotation Temperature dependences of the energy of electron ground state in AlxGa1 – xAs / GaAs / AlxGa1 – xAs nanofilms of different thickness and concentrations (x) of the barrier material were calculated. Calculations were performed by using the Green functions method, approximation of the effective masses for the electronic system and model of the dielectric continuum – for phonons. The interaction of all branches of the optical phonons: confined in the well material, semi-spaced – in barrier medium and interface has been taken into account. It is shown that the increase in the temperature from 0 to 300 K can cause the increase in the magnitude of long-wave shift of the electron energy about 25-30 % depending on the nanofilm thickness and concentration x.

List of References