Performance Analysis of a n-i-p and p-i-n Structured Lead-Free Cs2TiI6 -Based Perovskite Solar Cell
| Authors | K. Chakraborty1 , R. Narmadha2, Islom Kadirov3, Visalakshi Narapareddi4, Ranjan Kumar Mahapatra5 , Karedla Chitambara Rao6 |
| Affiliations |
1Department of Electrical Engineering, IMPS College of Engineering and Technology, Malda, W.B, India 2Department of Mechatronics, Sathyabama Institute of Science and Technology, Chennai, T.N, India 3Department of Transport Systems, Urgench State University, Urgench, Uzbekistan 4School of Business, Aditya University, Surampalem, A.P, India 5Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Guntur, A.P, India 6Department of Electronics and Communication Engineering, Aditya Institute of Technology and Management, Tekkali, A.P., India |
| Е-mail | kunal.eiilm.vu@gmail.com |
| Issue | Volume 18, Year 2026, Number 2 |
| Dates | Received 25 January 2026; revised manuscript received 19 April 2026; published online 29 April 2026 |
| Citation | K. Chakraborty, R. Narmadha, et al., J. Nano- Electron. Phys. 18 No 2, 02022 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(2).02022 |
| PACS Number(s) | 88.40.jm |
| Keywords | Cs2TiI6, Perovskite (6) , EQE (3) , PV (30) , Thickness (13) , PCE (8) . |
| Annotation |
This research work shows the development of an n-i-p structured FTO/TiO2/Cs2TiI6/Spiro-OMeTAD/Au and a p-i-n structured FTO/PEDOT:PSS/Cs2TiI6/PCBM/Al-based PSC photovoltaic model. The PSC material, Cs2TiI6 thickness, device temperature, and optical visibility were studied under optimal conditions for both the n-i-p and p-i-n structured models using a 1.5G spectrum Solar Cell Capacitance Simulator – 1 Dimension simulator (SCAPS-1D). The n-i-p model (regular) showed that Cs2TiI6-based PSC has optimum photovoltaic performance at 500 nm thickness, where photovoltaic performance is recorded as VOC: 0.76 V, JSC: 13.69 mA/cm2, PCE: 7.6 %, and FF: 76%, and the p-i-n model (inverted) revealed that Cs2TiI6-based PSC has the highest PV performance at 400 nm thickness, where photovoltaic indices are recorded as VOC: 0.63 V, JSC: 14.22 mA/cm2, PCE: 6.7 %, and FF: 70%. On the other side, both n-i-p-structured FTO/TiO2/Cs2TiI6/Spiro-OMeTAD/Au and p-i-n-structured FTO/PEDOT:PSS/Cs2TiI6/PCBM/Al-based PSC models have optimum device temperatures at 30 C. The visible range for the n-i-p model and the p-i-n model-based device is 1000 nm and 900 nm wavelength, respectively. |
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