Radiation Defects in Green GaP Light-Emitting Diodes
| Authors | T.M. Zahorodnia1 , L.A. Kot2, O.O. Krasnianskyi2, P.M. Pavlovskyi2, D.P. Stratilat3, V.P. Tartachnyk3 |
| Affiliations |
1Sumy State University, 40007 Sumy, Ukraine 2Dragomanov Ukrainian State University, 02000 Kyiv, Ukraine 3Institute for Nuclear Research, National Academy of Sciences of Ukraine, 02000 Kyiv, Ukraine |
| Е-mail | l.a.kot@udu.edu.ua |
| Issue | Volume 18, Year 2026, Number 2 |
| Dates | Received 05 January 2026; revised manuscript received 21 April 2026; published online 29 April 2026 |
| Citation | T.M. Zahorodnia, L.A. Kot, et al., J. Nano- Electron. Phys. 18 No 2, 02002 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(2).02002 |
| PACS Number(s) | 61.80. – x, 78.60.Fi |
| Keywords | LEDs, GaP (45) , Radiation defects, Electroluminescence, CVCs, Spectral characteristics, Electron irradiation (2) . |
| Annotation |
The results of investigations of the optical and electrical characteristics of green GaP light-emitting diodes (LEDs) grown by double liquid-phase epitaxy are presented. Low-temperature electroluminescence spectra in the wavelength range of 530 – 590 nm reveal a spectral structure with emission peaks at λ1 = 542 nm, λ2 = 554 nm, λ3 = 576 nm, and λ4 = 584 nm. Injection characteristics were obtained for the listed emission wavelengths. Comparative evaluations of the radiation resistance of emissions at λ1 = 542 nm and λ3 = 576 nm were carried out, as well as an analysis of the differential resistance values of the diodes in the regions of the current-voltage characteristics (CVCs) exhibiting positive and negative differential resistance. The effects of electron irradiation on the reverse currents of the LEDs were analyzed, in particular the expansion of the pre-breakdown region of the CVCs and the shift of the breakdown channel toward higher voltages. The work also includes results of studies on the recovery of the electrophysical characteristics of irradiated diodes induced by isochronal annealing. |
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