Self–Heating Effect in GaN Diode with Graded InGaN Mesa
| Authors | V.O. Zozulia , O.V. Botsula , L.V. Pavlova, O.V. Degovtsov |
| Affiliations |
V.N. Karazin Kharkiv National University, 4, Svoboda Sq., 61077 Kharkiv, Ukraine |
| Е-mail | v.zozulia@karazin.ua |
| Issue | Volume 18, Year 2026, Number 2 |
| Dates | Received 20 December 2025; revised manuscript received 15 April 2026; published online 29 April 2026 |
| Citation | V.O. Zozulia, O.V. Botsula, L.V. Pavlova, O.V. Degovtsov, J. Nano- Electron. Phys. 18 No 2, 02006 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(2).02006 |
| PACS Number(s) | 85.30.Fg, 73.40.Kp, 73.40. – c |
| Keywords | Graded layer, GaN (38) , InGaN (6) , Diode (25) , Temperature (46) , Electric field strength, Self-heating effect, Impact ionization, Noise (3) , Oscillation (5) , Spectral density. |
| Annotation |
The multifunctional active elements which are an n-type GaN-based channel on the sapphire substrate with InGaN flat-topped structure (a mesa) on top of channel surface are presented in the article. A mesa is a graded layer with a molar Ga fraction varying from 0 at the cathode contact to 1 in the channel, forming complex diode cathode. The structures with two types of doping profiles (uniform doping and doping profile with a low concentration region) with carrier concentrations of 6·1022 and 1023 m – 3 in the channel, and lengths of 1.28 m, 2.56 m, and 5.12 m are considered. The diode simulation has been carried out by using the Ensemble Monte Carlo Technique taking into account impact ionization and self-heating effect. The model applied to analyze temperature distribution in diode is provided. The temperature effect on the diode characteristics with direct current, as well as, the spectral (noise) characteristics of diode in conditions of a strong electric field are investigated. It has been found that possible modes of operation are determined by the impact ionization effect, as well as the temperature and its redistribution in diode channel by self-heating effect. Impact ionization occurring in a strong electric field leads to self-oscillation in a diode. In the diode with the length of 5.12 m it causes non-uniform heating due to the emergence of a moving strong field domains. Self-heating in short diodes leads to increasing threshold voltage which corresponds to current growing due to impact ionization. It has been shown that it is possible to stabilize strong electric fields near the cathode using a doping profile with a low concentration area, which contributes to a more uniform distribution of the electric field and temperature. The considered diodes can be used as a source of high frequency noise, a Gunn-like oscillator or a source of the high order harmonics in frequency multipliers. |
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