Thermodynamic Modeling of Phase Composition of Si/Si Oxide Structures Obtained by Phase Separation of Nonstoichiometric Si Oxides
| Authors | V. Naholenko1, A. Sarikov2, 3 , 4 , O. Ryzhko1 |
| Affiliations |
1Anatolii Lyhun Scientific Lyceum of Kam’ianske City Council, 51925 Kam’ianske, Ukraine 2V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine 3Educational Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv, 03022 Kyiv, Ukraine 4National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, 03056 Kyiv, Ukraine |
| Е-mail | nagolenkov@gmail.com |
| Issue | Volume 18, Year 2026, Number 2 |
| Dates | Received 16 November 2025; revised manuscript received 20 April 2026; published online 29 April 2026 |
| Citation | V. Naholenko, A. Sarikov, et al., J. Nano- Electron. Phys. 18 No 2, 02009 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(2).02009 |
| PACS Number(s) | 61.43.Dq, 64.75.g, 64.75.Jk, 68.55.a |
| Keywords | Nonstoichiometric Si oxide, Phase composition (3) , Phase separation, Si nanoparticles, Percolation threshold. |
| Annotation |
The article investigates the effect of annealing temperature and initial stoichiometry of Si oxide in a wide range on the phase composition of Si/SiOx nanocomposites formed by phase separation induced by high-temperature annealing. In this study, the appearance of internal stress hindering the phase separation process, is taken into account. The equilibrium stoichiometry of the Si oxide matrix, the relative amount of Si precipitated into the Si phase and the average precipitate size as functions of the specified parameters are modelled thermodynamically. The dependence of the percolation threshold of the Si nanoinclusions on the annealing temperature is determined. The obtained results are discussed comparing the contributions from different mechanisms during phase separation into the Gibbs free energy of Si/Si oxide systems. |
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