Surface Topology of p-InSe and n-SnS2-xSex (0 ≤ x ≤ 1) Layered Crystals and Heterojunctions on Their Basis

Authors V.M. Katerynchuk, Z.R. Kudrynskyi, Z.D. Kovalyuk
Affiliations

Frantsevich Institute for Problems of Materials Science of National Academy of Sciences of Ukraine,

Chernivtsi Department, str. Iryna Vilde, 5, Chernivtsi 58001, Ukraine

Е-mail [email protected]
Issue Volume 4, Year 2012, Number 2
Dates Received 08 March 2012; revised manuscript received 24 May 2012; published 04 June 2012
Citation V.M. Katerynchuk, Z.R. Kudrynskyi, Z.D. Kovalyuk 4 No 2, 02042 (2012)
DOI
PACS Number(s) 3.40.Lq, 81.16.Dn
Keywords Atomic force microscopy (9) , Layered crystals, Heterojunctions, Spectral characteristics, Current-voltage characteristics (3) .
Annotation The surfaces of the grown p-InSe and n-SnS2-xSex layered crystals were studied by means of atomic force microscopy. By the method of optical contact we have created p-InSe–n-SnS2-xSex heterojunctions and investigated their spectral and current-voltage characteristics.

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