Quantum Confinement in Cadmium Selenide Multilayer Thin Films Using Physical Vapour Deposition Method

Authors M. Melvin David Kumar , Suganthi Devadason , S. Rajesh

Thin film laboratory, Department of Physics Karunya University, Coimbatore – 641 114, India

Е-mail melvin@karunya.edu
Issue Volume 4, Year 2012, Number 2
Dates Received 11 September 2012; revised manuscript received 07 March 2012; published online 04 June 2012
Citation M. Melvin David Kumar, Suganthi Devadason, S. Rajesh, J. Nano-Electron. Phys. 4 No 2, 1 (2012)
PACS Number(s) 1.05. _ a, 03.65.Xp, 74.78.Fk
Keywords Multilayer thin films, Quantum Confinement (5) , CdSe (9) , ZnSe (10) , SiOx.
Annotation Nanocrystals of CdSe have been produced in SiOx matrix layer and in ZnSe heterostructure layer by thermal evaporation method. Structural studies were done by X-ray diffractometer. Quantum confinement effect of CdSe nanocrystals was analyzed from optical studies. Bulk CdSe has band-gap energy of 1.756 eV that can be shifted to larger values by reducing the crystal size to dimensions smaller than the Bohr radius of the exciton. Experimentally measured band-gap shifts with respect to the bulk value for quantum dot thin films are compared with the predictions of the effective mass approximation model (i.e., Brus model) and Quantum mechanical model. Sizes of the crystallites calculated from both models were coincident with each other.

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