Authors | D.M. Freik, Ya.P. Saliy, I.M. Lishchynskyy, V.V. Bachuk, N.Ya. Stefaniv |
Affiliations | Vasyl Stefanyk Precarpathian University, 57, Shevchenko Str., 76000 Ivano-Frankivsk, Ukraine |
Е-mail | freik@pu.if.ua |
Issue | Volume 4, Year 2012, Number 2 |
Dates | Received 05 November 2011; published online 08 May 2012 |
Citation | D.M. Freik, Ya.P. Saliy, I.M. Lishchynskyy, et al., J. Nano-Electron. Phys. 4 No 2, 02011 (2012) |
DOI | |
PACS Number(s) | 1.05.Cp, 68.37.Hk, 73.40.Lg, 79.61.G |
Keywords | Nanostructures (8) , Lead telluride, Growth mechanisms, Paraphase methods. |
Annotation | On the basis of AFM images of PbTe/(111) BaF2 nanostructures obtained from the vapor phase, the distribution of the surface relief heights is derived. Shown, that it has an asymmetric nature and is approximated by the sum of three Gaussians. It was established that the dependence of the most probable height of the main component on the deposition temperature has an activation character, and magnitude of the activation energy is less than the energy of one of the twelve links of crystal molecules. The growth mechanisms of the nanostructures are proposed. The surface relief of nanostructures is adequately modeled by the cellular automata method. |
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