Effect of Impurity Concentration on the Depth Profile of the Electric Field within Monolayer Thin Film

Authors N.F. Habubi , Kh.A. Mishjil, H.G. Rashid

Al-Mustansiryah University, College of Education, Physics Department, Baghdad, Iraq

Issue Volume 4, Year 2012, Number 2
Dates Received 24 December 2012; revised manuscript received 12 March 2012; published online 04 June 2012
Citation N.F. Habubi, Kh.A. Mishjil, H.G. Rashid, J. Nano-Electron. Phys. 4 No 2, 24 (2012)
PACS Number(s) 1.20.Nr.Хх, 81.40.Tv.Хх
Keywords Electric field intensity, Matrix formulas, Contamination sensitivity.
Annotation The effect of impurity concentration ratios on the depth profile of electric field within monolayer film is presented. SnO2 monolayer thin film material was prepared and doped with Co using spray chemical pyrolysis. The concentration ratios of impurity were 1 %, 3 %, 5 % and 7 %. The analysis utilizes matrix formulas based on Abele's formulas from the calculation of reflectance and transmittance. Present study gives an information to contamination sensitivity in optical coating issue.

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