Effect of Impurity Concentration on the Depth Profile of the Electric Field within Monolayer Thin Film
| Authors | N.F. Habubi , Kh.A. Mishjil, H.G. Rashid |
| Affiliations | Al-Mustansiryah University, College of Education, Physics Department, Baghdad, Iraq |
| Е-mail | |
| Issue | Volume 4, Year 2012, Number 2 |
| Dates | Received 24 December 2012; revised manuscript received 12 March 2012; published online 04 June 2012 |
| Citation | N.F. Habubi, Kh.A. Mishjil, H.G. Rashid, J. Nano-Electron. Phys. 4 No 2, 24 (2012) |
| DOI | |
| PACS Number(s) | 1.20.Nr.Хх, 81.40.Tv.Хх |
| Keywords | Electric field intensity, Matrix formulas, Contamination sensitivity. |
| Annotation | The effect of impurity concentration ratios on the depth profile of electric field within monolayer film is presented. SnO2 monolayer thin film material was prepared and doped with Co using spray chemical pyrolysis. The concentration ratios of impurity were 1 %, 3 %, 5 % and 7 %. The analysis utilizes matrix formulas based on Abele's formulas from the calculation of reflectance and transmittance. Present study gives an information to contamination sensitivity in optical coating issue. |
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List of References |
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