Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad

Authors Neha Goel1 , Manoj Kumar Pandey2
Affiliations

1 Research Scholar, SRM University, NCR Campus Ghaziabad, India

2 Department of ECE, SRM University NCR Campus Ghaziabad, India

Е-mail nehagoel@rkgit.edu.in, mkspandey@gmail.com
Issue Volume 8, Year 2016, Number 1
Dates Received 23 October 2015; published online 15 March 2016
Citation Neha Goel, Manoj Kumar Pandey, J. Nano- Electron. Phys. 8 No 1, 01041 (2016)
DOI 10.21272/jnep.8(1).01041
PACS Number(s) 85.30.tv
Keywords Silicon on insulator (SOI), Poisson’s Equation (4) , Front surface potential, Threshold voltage (15) , Electric field (6) , Drain Current (3) .
Annotation In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET) is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson’s equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper.

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