Authors | Neha Goel1 , Manoj Kumar Pandey2 |
Affiliations | 1 Research Scholar, SRM University, NCR Campus Ghaziabad, India 2 Department of ECE, SRM University NCR Campus Ghaziabad, India |
Е-mail | nehagoel@rkgit.edu.in, mkspandey@gmail.com |
Issue | Volume 8, Year 2016, Number 1 |
Dates | Received 23 October 2015; published online 15 March 2016 |
Citation | Neha Goel, Manoj Kumar Pandey, J. Nano- Electron. Phys. 8 No 1, 01041 (2016) |
DOI | 10.21272/jnep.8(1).01041 |
PACS Number(s) | 85.30.tv |
Keywords | Silicon on insulator (SOI), Poisson’s Equation (4) , Front surface potential, Threshold voltage (15) , Electric field (6) , Drain Current (3) . |
Annotation | In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET) is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson’s equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper. |
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