Temperature Dependent IR-Drop Analysis in Graphene Nanoribbon Based Power Interconnect
| Authors | S. Bhattacharya1 , D. Das2, H. Rahaman1 |
| Affiliations | 1 School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, India 2 Dept. of Electronics and Communication Engineering, Assam University, Silchar, India |
| Е-mail | 1983.sandip@gmail.com |
| Issue | Volume 8, Year 2016, Number 1 |
| Dates | Received 26 December 2015; revised manuscript received 03 March 2016; published online 15 March 2016 |
| Citation | S. Bhattacharya, D. Das, H. Rahaman, J. Nano- Electron. Phys. 8 No 1, 01001 (2016) |
| DOI | 10.21272/jnep.8(1).01001 |
| PACS Number(s) | 81.05.Uw, 63.22.Np, 61.46.Np. |
| Keywords | Graphene nanoribbon (GNR), Temperature (46) , Peak-IR-Drop, Effective-MFP (mean free path), Interconnect. |
| Annotation | The paper proposes a temperature dependent resistive model of graphene nanoribbon (GNR) based power interconnects. Using the proposed model, IR-drop analysis for 16nm technology node latest by ITRS is performed. For a temperature range from 150 K to 450 K, the variation of resistance of GNR interconnect is ~ 2-5 × times lesser than that of traditional copper based power interconnects. Our analysis shows that GNR based power interconnects can show ~ 2-3 times reduction in Peak IR-drop as compared with copper based interconnects for local, intermediate and global interconnects. |
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