Temperature Dependent IR-Drop Analysis in Graphene Nanoribbon Based Power Interconnect

Authors S. Bhattacharya1, D. Das2, H. Rahaman1
Affiliations

1 School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, India

2 Dept. of Electronics and Communication Engineering, Assam University, Silchar, India

Е-mail 1983.sandip@gmail.com
Issue Volume 8, Year 2016, Number 1
Dates Received 26 December 2015; revised manuscript received 03 March 2016; published online 15 March 2016
Citation S. Bhattacharya, D. Das, H. Rahaman, J. Nano- Electron. Phys. 8 No 1, 01001 (2016)
DOI 10.21272/jnep.8(1).01001
PACS Number(s) 81.05.Uw, 63.22.Np, 61.46.Np.
Keywords Graphene nanoribbon (GNR), Temperature (40) , Peak-IR-Drop, Effective-MFP (mean free path), Interconnect.
Annotation The paper proposes a temperature dependent resistive model of graphene nanoribbon (GNR) based power interconnects. Using the proposed model, IR-drop analysis for 16nm technology node latest by ITRS is performed. For a temperature range from 150 K to 450 K, the variation of resistance of GNR interconnect is ~ 2-5 × times lesser than that of traditional copper based power interconnects. Our analysis shows that GNR based power interconnects can show ~ 2-3 times reduction in Peak IR-drop as compared with copper based interconnects for local, intermediate and global interconnects.

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