Simulation of Hetero-junction (GaInP/GaAs) Solar Cell Using AMPS-1D
| Authors | Dennai Benmoussa1, M. Boukais2, H. Benslimane1 |
| Affiliations | 1 Physics Laboratory in Semiconductor Devices, University of Bechar, Algeria 2 (URMER), University Abou Bakr Belkaid, B.P. 119, Tlemcen, Algeria |
| Е-mail | deennai_benmoussa@yahoo.com, meri_232000@yahoo.fr |
| Issue | Volume 8, Year 2016, Number 1 |
| Dates | Received 29 November 2015; revised manuscript received 03 March 2016; published online 15 March 2016 |
| Citation | Dennai Benmoussa, M. Boukais, H. Benslimane, J. Nano- Electron. Phys. 8 No 1, 01009 (2016) |
| DOI | 10.21272/jnep.8(1).01009 |
| PACS Number(s) | 73.50.Pz, 88.40.jr |
| Keywords | Optimization (14) , Photovoltaic cell (4) , GaInP/GaAs AMPS-1D, Hetetro-junction. |
| Annotation | Photovoltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP / GaAs configuration for p/n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency. |
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