Simulation of Hetero-junction (GaInP/GaAs) Solar Cell Using AMPS-1D

Authors Dennai Benmoussa1, M. Boukais2, H. Benslimane1
Affiliations

1 Physics Laboratory in Semiconductor Devices, University of Bechar, Algeria

2 (URMER), University Abou Bakr Belkaid, B.P. 119, Tlemcen, Algeria

Е-mail deennai_benmoussa@yahoo.com, meri_232000@yahoo.fr
Issue Volume 8, Year 2016, Number 1
Dates Received 29 November 2015; revised manuscript received 03 March 2016; published online 15 March 2016
Citation Dennai Benmoussa, M. Boukais, H. Benslimane, J. Nano- Electron. Phys. 8 No 1, 01009 (2016)
DOI 10.21272/jnep.8(1).01009
PACS Number(s) 73.50.Pz, 88.40.jr
Keywords Optimization (14) , Photovoltaic cell (4) , GaInP/GaAs AMPS-1D, Hetetro-junction.
Annotation Photovoltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP / GaAs configuration for p/n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency.

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