Gallium Arsenide Czokhralski Crystal Growth with High Oscillatory Influences

Автори	V.G. Kosushkin¹ , S.L. Kozhitov² , S.G. Emelyanov³ , Yu.N. Parkhomenko² , L.V. Kozhitov²
Приналежність	¹ Bauman Moscow State Technical University (Branch in Kaluga), 2, Bazhenov Str., 248000 Kaluga, Russia ² National University of Science and Technology MISIS, 4, Leninskii Pr., 119049 Moscow, Russia ³ Southwest State University, 94, 50 let Oktyabrya, 305040 Kursk, Russia
Е-mail
Випуск	Том 6, Рік 2014, Номер 3
Дати	Одержано 19.05.2014, опубліковано online - 15.07.2014
Посилання	V.G. Kosushkin, S.L. Kozhitov, S.G. Emelyanov, et al., J. Nano- Electron. Phys. 6 No 3, 03043 (2014)
DOI
PACS Number(s)	61.48.De, 81. – b
Ключові слова	Crystal growth (2) , Ultrasonic vibration (2) , Homogeneity (4) .
Анотація	The influence of ultrasound introduced into the melt during the growth of single crystals of gallium arsenide. Ultrasonic vibrations had a frequency of 820 kHz and amplitude of 0.1-0.2 micrometer. Found an increase in the homogeneity of impurity distribution of the bands growth without change of the dislocation structure of single crystals. In the simulation result of the ultrasonic wave interaction with the melt in the crucible on the basis of the theory of formation of phases is established that nucleation rate associated with the frequency and amplitude of the ultrasonic vibration acting on the melt.
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