Автори | O.N. Ivanov , R.A. Lyubushkin , O.N. Soklakova |
Афіліація | Belgorod State National Research University, 85, Pobedy Str., 308015 Belgorod, Russia |
Е-mail | |
Випуск | Том 6, Рік 2014, Номер 3 |
Дати | Одержано 19.05.2014, опубліковано online - 15.07.2014 |
Цитування | O.N. Ivanov, R.A. Lyubushkin, O.N. Soklakova, J. Nano- Electron. Phys. 6 No 3, 03064 (2014) |
DOI | |
PACS Number(s) | 68.37.Hk, 68.37.Lp, 68.37.Yz, 68.47.De |
Ключові слова | Microwave-solvothermal synthesis, Hot isostatic pressure, Bismuth telluride (2) , Grain structure. |
Анотація | The bulk nanostructural Bi2Te3-based material was prepared by microwave assisted solvothermal method and hot isostatic pressure. Optimal synthesis conditions of the Bi2Te3 nanopowder were found. It was established that hot isostatic pressing of the nanopowders at the temperature of 400 С and the pressures of 2, 4, 6 and 8 GPa allowed us to prepare the homogeneous and dense Bi2Te3-based material with the mean grain size of 50 nm. It is found that an electrical resistivity increases as the mean grain size of the material under study decreases. |
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