Effect of Bias Fields on off-Diagonal Magnetoimpedance (MI) Sensor Performance
| Автори | N.A. Yudanov1 , A.A. Rudyonok1, L.V. Panina1,2 , A.V. Kolesnikov1, A.T. Morchenko1 , V.G. Kostishyn1 |
| Приналежність | 1 National University of Science and Technology, MISIS, Moscow, Russia 2 Institute for Design problems in Microelectronics, RAS, Moscow, Russia |
| Е-mail | l.panina@plymouth.ac.uk |
| Випуск | Том 6, Рік 2014, Номер 3 |
| Дати | Одержано 19.05.2014, у відредагованій формі - 03.07.2014, опубліковано online - 15.07.2014 |
| Посилання | N.A. Yudanov, A.A. Rudyonok, L.V. Panina, et al., J. Nano- Electron. Phys. 6 No 3, 03046 (2014) |
| DOI | |
| PACS Number(s) | 85.75.Ss, 87.85.fk |
| Ключові слова | Off-diagonal magnetoimpedance, Pulsed magnetoimpedance, Magnetoimpedance sensor (2) , Linear sensor, Amorphous magnetic wire, Bias field (2) . |
| Анотація | This paper investigates the performance of off-diagonal magnetoimpedance in Co-based amorphous wire subjected to dc bias fields: circular and orthogonal (with respect to the wire axis). Typically it is assumed that the wire impedance is insensitive to the orthogonal field so the wire element can be used to construct 3D sensors. Our results demonstrated the possibility of large impedance change due to this field, in the range of 10 mV/Oe. The dc current in a wire generating a circular field results in improved sensitivity due to elimination of the domain structure and smoothing the effect of the anisotropy deviations. |
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