Impurity Influence on Nitride LEDs

Автори O.I. Rabinovich , S.A. Legotin , S.I. Didenko
Приналежність

NIST “Moscow Institute of Steel and Alloys”, 4, Leninskiy Pr., 119040 Moscow, Russian Federation

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Випуск Том 6, Рік 2014, Номер 3
Дати Одержано 19.05.2014, у відредагованій формі - 01.07.2014, опубліковано online - 15.07.2014
Посилання O.I. Rabinovich, S.A. Legotin, S.I. Didenko, J. Nano- Electron. Phys. 6 No 3, 03002 (2014)
DOI
PACS Number(s) 07.05.Tp, 85.60.Jb
Ключові слова Light emitting diode, AlGaInN, Simulation (35) , Quantum efficiency (3) .
Анотація Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure and devices including more than 25 basic parameters. It was found that characteristics depend on impurity and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quantum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN heterostructure LEDs characteristics could be improved.

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