Features of Electronic Emission from Surface of Dielectric Thin-film Materials with Ion-beam Etching

Автори	A. Kurochka¹ , A. Sergienko¹ , S. Kurochka¹ , V. Kolybelkin²
Приналежність	¹ National University of Science and Technology «MISIS» (MISIS), 4, Leninskiy Pr., Moscow, Russia ² Research and production corporation "Istok", 2A, Vokzalnaya Str., Fryazino, Moscow Region, Russia
Е-mail
Випуск	Том 6, Рік 2014, Номер 3
Дати	Одержано 19.05.2014, опубліковано online - 15.07.2014
Посилання	A. Kurochka, A. Sergienko, S. Kurochka, V. Kolybelkin, J. Nano- Electron. Phys. 6 No 3, 03031 (2014)
DOI
PACS Number(s)	79.90. + b
Ключові слова	Ion-electronic emission (2) , Ion-beam etching (2) , Secondary electron current (2) , Electric field strength, Electron affinity (2) , Surface electron states, Surface potential (9) .
Анотація	This work presents a series of experimental studies aimed at validating the main theoretical aspects of the ion-electron emission in conditions of ion-beam etching and lookup the possibility of practical realization of the method of operative control processes ion-beam etching different dielectric thin film materials of electronic technics. In the real article the estimation of influence of the pointed superficial potential is conducted in dielectric tape on the integral signal of secondary electrons at an ionic etch. The electric field strength in dielectric film under the influence of the induced potential creates prerequisites for the emergence of "Malterovskay" emission, defined by properties actually dielectric and properties of the substrate.
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