On the Applicability of HF and μ-PCD Methods for Determination of Carrier Recombination Lifetime in the Non-passivated Single-crystal Silicon Samples
| Автори | I.М. Anfimov, S.P. Kobeleva , I.V. Schemerov , M.N. Orlova |
| Афіліація | National University of Science and Technology “MISiS”, 4, Leninsky Pr., 119049 Moscow, Russia |
| Е-mail | |
| Випуск | Том 6, Рік 2014, Номер 3 |
| Дати | Одержано 19.05.2014, опубліковано online - 15.07.2014 |
| Цитування | I.М. Anfimov, S.P. Kobeleva, I.V. Schemerov, M.N. Orlova, J. Nano- Electron. Phys. 6 No 3, 03018 (2014) |
| DOI | |
| PACS Number(s) | 81.05.Dz |
| Ключові слова | Single-crystal silicon, Contactless μ-PCD method, Carrier recombination lifetime, Photoconductivity decay. |
| Анотація | Comparison of the results of measuring the carrier recombination lifetime in silicon single crystals by contactless HF and microwave μ-PCD methods was carried out. It has been shown that HF method gives a large error compared with a μ-PCD method. |
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