Thermal and Magnetic Field Sensors Based on Injection-coupled Devices

Автори	V.N. Murashev¹ , S.A. Legotin¹ , P.A. Ivshin¹, K.I. Tapero², O.I. Rabinovich¹ , D. Elnikov¹, A.A. Krasnov¹ , K.A. Kuz’mina¹
Приналежність	¹ National University of Science and Technology “MISIS”, 4, Leninskiy Prospect, 119049 Moscow, Russian Federation ² Research Institute of Scientific Instruments (RISI), 8, Turayevo, 140080 Lytkarino, Moscow Region, Russian Federation
Е-mail	vnmurashev@mail.ru
Випуск	Том 6, Рік 2014, Номер 3
Дати	Одержано 19.05.2014, опубліковано online - 15.07.2014
Посилання	V.N. Murashev, S.A. Legotin, P.A. Ivshin, et al., J. Nano- Electron. Phys. 6 No 3, 03021 (2014)
DOI
PACS Number(s)	85.40. – e
Ключові слова	Sensor (27) , Temperature (46) , Magnetic field (7) , Functionally integrated structure (3) .
Анотація	Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device –injection-coupled device (ICD) – are addressed. Examples of possible ICD electrical and physical designs are examined in detail. These are based on the existing CMOS and use bipolar technologies. It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix. These advantages make ICDs highly attractive for a number of important applications, such as, e.g., radiation detectors or magnetic and thermal field detectors.
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