RF Magnetron Sputtering of Silicon Carbide and Silicon Nitride Films for Solar Cells
| Автори | V.S. Zakhvalinskii1 , E.A. Piljuk1 , I.Yu. Goncharov1 , V.G. Rodriges1, A.P. Kuzmenko2 , S.V. Taran1 , P.A. Abakumov2 |
| Афіліація | 1 Belgorod National Research University, 85, Pobedy Str., 308015 Belgorod, Russia 2 South-West State University, 94, 50 LetOctyabtyastr Str., Kursk, Russia |
| Е-mail | |
| Випуск | Том 6, Рік 2014, Номер 3 |
| Дати | Одержано 19.05.2014, опубліковано online - 15.07.2014 |
| Цитування | V.S. Zakhvalinskii, E.A. Piljuk, I.Yu. Goncharov, et al., J. Nano- Electron. Phys. 6 No 3, 03062 (2014) |
| DOI | |
| PACS Number(s) | 61.10.Eq |
| Ключові слова | Atomic force microscopy (9) , RF- magnetron sputtering, Silicon carbide (9) , Silicon nitride (2) , Thin films (60) , Solar cells (17) . |
| Анотація | RF-magnetron nonreactive sputtering method from solid-phase target in argon atmosphere was used for obtaining thin silicon carbide and silicon nitride films, that are used for constructing solar cells based on substrates of single crystal silicon of p-type. |
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