Mechanism and Conditions of Nanoisland Structures Formation by Vacuum Annealing of Ultrathin Metal Films

Authors S.V. Tomilin, A.S. Yanovsky

Semiconductor Physics Department, Zaporizhzhya National University, 66, Zhukovskogo St., 69600 Zaporizhzhya, Ukraine

Issue Volume 5, Year 2013, Number 3
Dates Received 01 March 2013; revised manuscript received 30 June 2013; published online 12 July 2013
Citation S.V. Tomilin, A.S. Yanovsky, J. Nano- Electron. Phys. 5 No 3, 03014 (2013)
PACS Number(s) 68.55.– a
Keywords Thin film (101) , Vacuum annealing, Diffusion (10) , Nanoisland, SEM (107) .
Annotation The paper presents theoretical and experimental results of studies of nanoisland metallic coatings on semiconductor substrates obtained by vacuum annealing of ultrathin solid films. It is shown experimentally that the formation of islet structure is possible only for films with thickness above a certain value. The study of surface morphology of the films was carried out using SEM.

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