Stress Topology within Silicon Single-Crystal Cantilever Beam

Authors A.P. Kuzmenko1 , D.I. Timakov1 , P.V. Abakumov1 , M.B. Dobromyslov2 , L.V.Odnodvorets3

1 South-West State University, 94, 50 Let Octyabtya Str., 305040 Kursk, Russia

2 Pacific National University, 136, Tihkhookeanskaya Str., 680035 Khabarovsk, Russia

3 Sumy State University, 2, Rymsky-Korsakov Str., 40007 Sumy, Ukraine

Issue Volume 5, Year 2013, Number 3
Dates Received 22 May 2013; published online 12 July 2013
Citation A.P. Kuzmenko, D.I. Timakov, P.V. Abakumov, et al., J. Nano- Electron. Phys. 5 No 3, 03024 (2013)
PACS Number(s) 42.65.Dr, 75.60.Ch
Keywords Raman scattering spectroscopy (2) , Silicon single-crystal, Flexural stresses, Mapping of Raman shift distributions (2) .
Annotation Qualitative mechanism in line with experimental data on visualization of the domain structure and fine structure of the domain wall in weak ferromagnets has been proposed. The mechanism is based on the phenomenological consideration of Faraday rotation, optical absorption, and atom polarization in response to the radiation exciting Raman scattering. Qualitative agreement of estimates on the scattered radiation intensity in oppositely- magnetized domains with experimental results is good, which made it possible to attack problems of visualization of magnetic entities with nanoscale resolution.

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