Matching Cascades of High-Frequency Electronic Devices

Authors V.G. Kydrya

Odessa National Academy of Food Technologies, 112, Kanatnaya Str., 65039 Odessa, Ukraine

Issue Volume 5, Year 2013, Number 3
Dates Received 27 January 2013; revised manuscript received 31 January 2013; published online 17 October 2013
Citation V.G. Kydrya, J. Nano- Electron. Phys. 5 No 3, 03032 (2013)
PACS Number(s) 84.30.Bv, 84.30.Le, 85.40.Bh
Keywords Integrated circuit, Bullet transformer, Modeling (20) , CAD (27) .
Annotation The work is aimed to the features of simulation of the microwave electromagnetic interaction, which forms an internal electromagnetic state of monolithic integrated circuits. In particular, we perform the study of matching devices, which are made as the band-pass lines. The proposed simulation technique lets us to determinate the dependence of finite frequency and temporal characteristics of cascading schemes of amplifiers on the morphology of matching devices. In such a way both the internal and external processes in spatially distributed strip nano- and microstructures are reflected.

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