Periodicity of the Distribution of Intrinsic Defects in Epitaxial PbTe Films

Authors Ya.P. Saliy , D.M. Freik , I.K. Yurchyshyn , I.M. Freik
Affiliations

Vasyl Stefanyk Precarpathian National University, 57, Shevchenka Str., 76000 Ivano-Frankivsk, Ukraine

Е-mail [email protected]
Issue Volume 5, Year 2013, Number 3
Dates Received 14 February 2013; published online 17 October 2013
Citation Ya.P. Saliy, D.M. Freik, I.K. Yurchyshyn, I.M. Freik, J. Nano- Electron. Phys. 5 No 3, 03038 (2013)
DOI
PACS Number(s) 75.50.Lw, 73.63.Hs, 73.61.Ey
Keywords Thin films (60) , Dimensional effects, Lead chalcogenides, Periodicity, Damped deflection of characteristics, Methodological averaging, Diffuse instability.
Annotation The p-type PbTe films have been grown on the mica substrates by the method of open evaporation in vacuum. It was established that dimensional effects in the films are connected with periodic distribution of donors. Approximation of the experimental effective dependences of the conductivity σd and the product of the Hall coefficient and square of conductivity Rdσd2 on the thickness by the theoretical dependences was executed. These dependences are integrals of local concentration n(x) represented by the sinusoid which is determined by the distribution of donors in depth, and mobility μ, which are independent on coordinate. Spatial parameters of the distributions of defects were obtained. Based on the layered inhomogeneity of semiconductor PbTe films, we have suggested the hypothesis of diffusion instability of point defects initiated by the substrate-film interface.

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