To the Question about Migration of Impurity Atoms in Graphene

Authors A.S. Dolgov , Yu.L. Zhabchyk
Affiliations

Zhukovsky National Airspace University “KhAI”, 17, Chkalova Str., 61070 Kharkov, Ukraine

Е-mail [email protected]
Issue Volume 5, Year 2013, Number 3
Dates Received 21 February 2013; published online 17 October 2013
Citation A.S. Dolgov, Yu.L. Zhabchyk, J. Nano- Electron. Phys., 5 No 3, 03039 (2013)
DOI
PACS Number(s) 66.30.Pa
Keywords Graphene (23) , Impurities, Migration, Generating function, Distribution of atoms.
Annotation The uncorrelated accidental jumps of the migration subjects from the allowed positions to the identical immediate ones in the two-dimensional hexagonal structure, which simulates the graphene nodes distribution, are considered. The impurity atoms are placed in the interstitial positions between two atoms of each hexagon sides. The offered system corresponds to the sufficiently high temperatures, where the elementary migration act represents the classical over-barrier jump whose probability is defined by the temperature. The exact solution of the unlimited set of the migration microscopic equations is written in the generating function technique and the corresponding microscopic characteristics are found. The anisotropy of the early migration stage can act as an instrument of the matrix state diagnosis and also the formation of the specified impurity geometric structures which are jointed with graphene. The diffusive spread rate, which is compared with the rate of the cellular migration spread, is found. The evolution features of the macroscopic distribution picture of the impurity component on the graphene lattice which are designated by the microscopic geometry impurity atoms displacement are discussed.

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