Spectroscopic Characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs Quantum Well Heterostructures

Authors Mirgender Kumar1, V.P. Singh2
Affiliations

1 Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 India

2 Indian Institute of Technology, Kharagpur-721302 India

Е-mail [email protected]
Issue Volume 5, Year 2013, Number 3
Dates Received 09 January 2013; revised manuscript received 02 July 2013; published online 12 July 2013
Citation Mirgender Kumar, V.P. Singh, J. Nano- Electron. Phys. 5 No 3, 03006 (2013)
DOI
PACS Number(s) 73.40.Kp, 42.55.Pх
Keywords Photoreflectance spectroscopy, Surface photovoltaic spectroscopy, HRXRD (3) , Heterostructures (2) .
Annotation This work presents the results of the characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs quantum well hetero-structures growth by MOVPE system. The main goal is to explore the ability of characterization techniques for multilayer structures like quantum wells. The characterization was performed using photoreflectance spectroscopy, surface photovoltaic spectroscopy and X-ray diffraction. The experimental results are verified by numerical simulation.

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