New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V
| Authors | N.F. Zikrillayev1, S.B. Isamov1 , B.O. Isakov1, T. Wumaier2, Li wen Liang2, J.X. Zhan2, T. Xiayimulati2 |
| Affiliations |
1Tashkent State Technical University, 100095, Tashkent, Uzbekistan 2Xinjiang Institute of Engineering, 830023, Urumchi, China |
| Е-mail | |
| Issue | Volume 15, Year 2023, Number 6 |
| Dates | Received 26 August 2023; revised manuscript received 14 December 2023; published online 27 December 2023 |
| Citation | N.F. Zikrillayev, S.B. Isamov, B.O. Isakov, et al., J. Nano- Electron. Phys. 15 No 6, 06024 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(6).06024 |
| PACS Number(s) | 61.72.uf, 68.43.Jk |
| Keywords | Semiconductor (62) , Binary clusters, Muticascade PV Cells, Elementary Cells, Self-Organization (5) , Self-Structure, Nanostructure (19) , Nanocrystal (14) , Photosensivity, Combinations, Multistage PV cells. |
| Annotation |
The diffusion technology has been developed for the formation of binary clusters involving elements of group III and V in silicon. It is shown that by controlling the concentration of elements of group III and V atoms, multilayer silicon-based heterojuns can be formed in the surface region of silicon with enriched AIIIBV nanocrystals, followed by enriched with various combinations of Si2AIIIBV unit cells (1 – 5 m thick). This creates a practical new material based on silicon - a continuous graded-gap structure, i.e. heterojunsby a smooth transition from the band gap of III – V semiconductor compounds to the band gap of silicon. |
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List of References |
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