Organic Field-Effect Transistor Based on Poly 3-hexylthiophene as Ammonia Vapor Sensor
| Authors | Akhiruddin Maddu, Andri Gunawan, Irmansyah Irmansyah |
| Affiliations |
Department of Physics, Faculty of Mathematics and Natural Sciences, IPB University, 16680 Bogor, Indonesia |
| Е-mail | |
| Issue | Volume 15, Year 2023, Number 6 |
| Dates | Received 19 August 2023; revised manuscript received 21 December 2023; published online 27 December 2023 |
| Citation | Akhiruddin Maddu, Andri Gunawan, Irmansyah Irmansyah, J. Nano- Electron. Phys. 15 No 6, 06020 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(6).06020 |
| PACS Number(s) | 85.30.Tv |
| Keywords | Ammonia (2) , Field-effect transistor, Poly 3-hexylthiophene, SiO2 (9) . |
| Annotation |
An organic field-effect transistor (OFET) based on poly 3-hexyl thiophene (P3HT) as an active layer has been developed to detect ammonia vapor. Silicon dioxide (SiO2) as the dielectric layer on this FET is grown on the surface of the p-type silicon substrate by heating in an oxygen atmosphere in the furnace at 1000 C for 3 hours, oxygen gas (O2) is flowed into the furnace during the heating process. The results of the energy-dispersive X-ray spectroscopy (EDS) characterization showed that the silicon substrate which had been oxidized contained about 35 % O2. P3HT as the active layer was grown on the surface of the SiO2 layer using the spin coating method. The I-V characteristics of FET show that the drain-source current (IDS) is affected by changes in the gate voltage (VG). The greater the VG, the higher the Id-s produced. The effect of ammonia vapor shows that IDS on the I-V curve decreases with increasing concentration of ammonia vapor. The dynamic response of the FET to ammonia vapor shows that the greater the VG, the higher the sensitivity of the device. For VG = 0 volt, the sensitivity of FET in ammonia sensing is 0.236 volt/%, meanwhile for VG = – 8 volt, the sensitivity of FET in ammonia sensing is 0.264 volt/%. |
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