InPAs- Based Diode as Active Element in Terahertz Range
| Authors | K.H. Prykhodko , O.V. Botsula |
| Affiliations |
V.N. Karazin Kharkiv National University, 4, Svoboda sq., 61077 Kharkiv, Ukraine |
| Е-mail | kyrylo.prykhodko@karazin.ua |
| Issue | Volume 15, Year 2023, Number 6 |
| Dates | Received 15 October 2023; revised manuscript received 18 December 2023; published online 27 December 2023 |
| Citation | K.H. Prykhodko, O.V. Botsula, J. Nano- Electron. Phys. 15 No 6, 06019 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(6).06019 |
| PACS Number(s) | 85.30.Fg, 73.40.Kp, 73.40. – c |
| Keywords | Graded-gap layer, Electric field strength, Impact ionization, Doping level, Current oscillation, Frequency range, Generation efficiency (2) . |
| Annotation |
А study of electromagnetic oscillations in the longwave part of the terahertz range by graded-band diodes based on InPAs has been carried out. These diodes contain an InP cathode layer and an InPAs graded-band layer using InP0.2As0.8 on the anode contact. Diodes with a length of 500, 640 and 1280 nm were considered. A donor concentration in the active region of the diode is 1017 cm – 3. The direct current characteristics of diodes were determined and their frequency properties in the oscillation generation mode were evaluated. The simulation was carried out using the Ensemble Monte Carlo Technique with consideration of impact ionization. Characteristics of diodes were compared with those obtained for diodes without accounting for impact ionization.It was shown that the I-V characteristic of short graded-band diodes does not contain areas with negative differential conductivity. Under the condition of impact ionization, these diodes exhibit an increase in current. While these diodes remain stable, they demonstrate charged layer current instabilities and oscillation generation in resonant circuits. The study revealed that the maximum generation efficiency is approximately 10 %, observed in diodes with a length of 1280 nm at a frequency of 100 GHz. In shorter diodes, the efficiency decreases to 3.9 % and 2.0 % in diodes with lengths of 640 and 500 nm, respectively. The cut-off frequency of generation was around 400 GHz in diodes with a length of 500 nm. Impact ionization was found to lead to a decrease in efficiency without compromising the frequency properties of diodes. Conversely, in the case of a 1280 nm diode, it improved frequency properties, supporting the application of graded diodes with impact ionization for achieving maximal frequencies. |
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