p-SnS/n-InSe Heterostructures Fabricated by the Spray-Pyrolysis Method
| Authors | I.G. Tkachuk1 , I.G. Orletskii2 , Z.D. Kovalyuk1 , V.I. Ivanov1 , A.V. Zaslonkin1 |
| Affiliations |
1Institute for Problems of Materials Science, Chernivtsi Branch, 5, I. Vilde st., 58001 Chernivtsi, Ukraine 2Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynsky st., 58012 Chernivtsi, Ukraine |
| Е-mail | ivan.tkachuk.1993@gmail.com |
| Issue | Volume 15, Year 2023, Number 6 |
| Dates | Received 12 September 2023; revised manuscript received 20 December 2023; published online 27 December 2023 |
| Citation | I.G. Tkachuk, I.G. Orletskii, et al., J. Nano- Electron. Phys. 15 No 6, 06028 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(6).06028 |
| PACS Number(s) | 73.40. – c, 78.66. – w |
| Keywords | Indium Selenide, Tin Sulfide, Heterostructures (2) , Spray Pyrolysis (9) , I-V Characteristics (2) , Electrical Conductivity (10) , Photosensitivity. |
| Annotation |
This work is devoted to the fabrication and investigation of electrical and photoelectric characteristics of p-SnS/n-InSe anisotype heterojunctions. Low-temperature spray pyrolysis technology was used to deposit SnS thin films on InSe crystal substrates. Based on the analysis of temperature dependences of forward and reverse I-V characteristics, the dynamics of changes in the energy parameters of the heterojunction were investigated. Theoretical models describing the behavior of the forward and reverse I-V characteristics are proposed. The value of the series and shunt resistances, as well as their influence on the I-V characteristics of the heterojunction, was determined. The value of the contact potential difference was estimated. The charge transfer was analyzed. The spectral dependence of the quantum efficiency of the p-SnS/n-InSe heterostructure irradiated from the side of the SnS film in the photon energy range of 1.2÷3.2 eV was studied. |
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List of References |
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