The Experimental Setup for the Study of Sources of Positive and Negative Ions

In modern medicine, accelerator technology, semiconductor production, there is a need to develop ion sources of various elements capable of generating currents in a wide range of values from 1 A to 100 mA. Before using the created ion sources in specific applied cases, it is necessary to study them in detail, optimize the operating parameters and study the main characteristics of the ion beam. Current, emittance, brightness, energy distribution and mass composition, stability of the beam output signal are important for obtaining a quality result. The article presents a stand for testing ion sources developed at the IAP of NASU. The developed installation allows researching various sources of metal and gas ions, both negative and positive ions. The installation has all the tools for a detailed study of such parameters of the ion current as the distribution of ions by energy, by mass, emittance, beam profile, working gas consumption. The developed device for measuring the distribution of ions by mass allows studying the elemental composition of the beam. Measurement of the distribution of particles by energy is necessary to study the source for the possibility of its use with specific accelerators of charged particles and implantation technologies. The emittance meter allows you to study the emittance of the beam and obtain its profile. At the installation, a series of studies of the sputtering source of metal ions, the duoplasmatron, and the source of negative ions were carried out, the characteristics of the ion beams created by them were studied in detail, and the values of emittance and mass distribution of particles were determined. The developed facility allows for detailed research of almost any type of ion sources for ion implantation technologies.