Electrical and Photoresponse Properties of NiFe2O4/InSe Heterojunction
| Authors | V.I. Ivanov1 , I.G. Tkachuk1 , 3 , I.G. Orletskii2, Z.D. Kovalyuk1 , M.V. Tovarnitskii1, B.V. Kushnir1 |
| Affiliations |
1Institute for Problems of Materials Science, Chernivtsi Branch, 58001 Chernivtsi, Ukraine 2Yuriy Fedkovych Chernivtsi National University, 58012 Chernivtsi, Ukraine 3Bukovinian State Medical University, 58002 Chernivtsi, Ukraine |
| Е-mail | ivan.tkachuk.1993@gmail.com |
| Issue | Volume 16, Year 2024, Number 4 |
| Dates | Received 18 May 2024; revised manuscript received 21 August 2024; published online 27 August 2024 |
| Citation | V.I. Ivanov, I.G. Tkachuk, et al., J. Nano- Electron. Phys. 16 No 4, 04028 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(4).04028 |
| PACS Number(s) | 73.40. – c, 78.66. – w |
| Keywords | Indium Selenide, Heterostructures (2) , Spray pyrolysis (9) , I-V characteristics (2) , Photoresponse. |
| Annotation |
The conditions of application thin semiconducting ferrite NiFe2O4 films on n-InSe crystalline layered semiconductor substrates at a temperature of 623 K by the spray-pyrolysis method for the creation of photosensitive n-NiFe2O4/n-InSe heterojunctions were studied. The mechanisms of current flow through the heterojunction were established based on the temperature dependence of forward and reverse I-V characteristics. The spectral photosensitivity of the n-NiFe2O4/n-InSe heterojunction in the energy range of 1.26÷3.2 eV was analyzed. |
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List of References |
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