Clustering-Based Growth Analysis of 2D Transition Metal Thin Films on Graphene Substrates via Molecular Beam Epitaxy
| Authors | A.A. Khatri1, P.M. Yawalkar2, P. William3 , V.M. Tidake4, P.M. Patare5, P.B. Khatkale6, S.S. Ingle5 |
| Affiliations |
1Department of Computer Engineering, Jaihind College of Engineering, Kuran, SPPU, Pune, MH, India 2Department of Computer Engineering, MET's Institute of Engineering, Nashik, India 3Department of Information Technology, Sanjivani College Engineering, Kopargaon, SPPU, Pune, India 4Department of MBA, Sanjivani College of Engineering, Kopargaon, SPPU, Pune, India 5Department of Mechanical Engineering, Sanjivani College of Engineering Kopargaon, SPPU, Pune, India 6Sanjivani University, Kopargaon, MH, India |
| Е-mail | william160891@gmail.com |
| Issue | Volume 16, Year 2024, Number 4 |
| Dates | Received 12 April 2024; revised manuscript received 21 August 2024; published online 27 August 2024 |
| Citation | A.A. Khatri, P.M. Yawalkar, P. William et al., J. Nano- Electron. Phys. 16 No 4, 04005 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(4).04005 |
| PACS Number(s) | 81.10.PqХх, 81.15.Hi |
| Keywords | Growth Analysis, 2D Transition Metal Dichalcogenide, Graphene Substrates, Molecular Beam Epitaxy (MBE), Fuzzy C-Means. |
| Annotation |
Metal dichalcogenides are a kind of chemical substance that consists of a metal atom paired with chalcogen elements such as selenium and sulphur. These materials have distinctive electrical and optical characteristics, making them fascinating for a variety of applications, including electronics and optoelectronics. Growth examination of metal dichalcogenide thin films entails analyzing their controlled deposition and crystallization. Understanding growth processes, substrate interactions and controlling parameters like as temperature and precursor concentration are critical for producing high-quality films with the appropriate characteristics, establishing the way for developments in nanotechnology and device manufacturing. Throughout this research, we employed the Machine learning (ML) enabled Reflection High-Energy Electron Diffraction (RHEED) analytical approach to examine the development of two-dimensional (2D thin layers of dichalcogenides (ReSe2) made of transition metals on graphene substrates using Molecular Beam Epitaxy (MBE). Independent Component Analysis (ICA) and the Fuzzy C-Means approach were implemented to determine different patterns and represent the pattern growths. To decrease the original dataset's dimensionality, we employed 20 Independent Components (ICs) and each RHEED image was distributed to the closest centroid, which resulted in the dataset being clustered using Fuzzy C-Means. |
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List of References |
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