Threshold Conditions for 1-D Model of Laser with Partial Active Region

Authors S.S. Herasymov1, O.S. Hnatenko1 , , S.V. Dukhopelnykov2, 3 , 4 , D.O. Herasymova2
Affiliations

1Kharkiv National University of Radio Electronics, 61166 Kharkiv, Ukraine,

2Institute of Radio-Physics and Electronics NASU, 61085 Kharkiv, Ukraine

3V.N. Karazin Kharkiv National University, 61022 Kharkiv, Ukraine

4Institut d’Electronique et de Technologies du numéRique - UMR 6164, Universite de Rennes, 35042 Rennes, France

Е-mail oleksandr.hnatenko@nure.ua
Issue Volume 16, Year 2024, Number 4
Dates Received 20 May 2024; revised manuscript received 15 August 2024; published online 27 August 2024
Citation S.S. Herasymov, O.S. Hnatenko, et al., J. Nano- Electron. Phys. 16 No4, 04033 (2024)
DOI https://doi.org/10.21272/jnep.16(4).04033
PACS Number(s) 03.50.De, 41.90.e, 42.55.Rz, 42.62.Cf
Keywords Laser mode, Threshold gain, Eigenproblem, Microcavity, Active region.
Annotation

The threshold conditions for a layered plane-parallel laser model consisting of a cavity filled with a gain material are considered in this work. The lasing modes can be viewed as natural modes with purely real-valued frequencies, in other words, the solutions of the source-free Maxwell equations. To investigate the mode-specific emission frequencies and the threshold gain index values, we apply the Lasing Eigenvalue Problem approach. By using this approach, we look for the mentioned values as the components of two-component eigenvalues of a specific time-harmonic electromagnetic boundary problem where the active region is presented and characterized by an imaginary part of the gain material refractive index. The obtained results clarify the effect of the gain material choice. Besides, the approximate expression for the gain per the normalized wavelength for the on-threshold modes was obtained and showed agreement with lasing mode trajectories for varying relative active region thickness. This analysis can be useful in the optimization of the laser performance due to achieving of lower threshold leading to larger output power which is crucial for e.g. industrial and military laser device applications.

List of References