Authors | K. Chowdhury1,2, U. Gangopadhyay3, R. Mandal2 |
Affiliations |
1Department of Renewable Energy, Maulana Abul Kalam Azad University of Technology, West Bengal, India 2School of Energy Studies, Jadavpur University, Kolkata, India 3CARREST, Meghnad Saha Institute of Technology, Kolkata, India
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Е-mail | kunal.chowdhury2012@gmail.com |
Issue | Volume 13, Year 2021, Number 3 |
Dates | Received 10 January 2021; revised manuscript received 15 June 2021; published online 25 June 2021 |
Citation | K. Chowdhury, U. Gangopadhyay, R. Mandal, J. Nano- Electron. Phys. 13 No 3, 03004 (2021) |
DOI | https://doi.org/10.21272/jnep.13(3).03004 |
PACS Number(s) | 84.60.Jt |
Keywords | SIS (123) , ITO (13) , Al2O3 (6) , Reflectivity (3) , Degenerative semiconductor, Hole selective contacts. |
Annotation |
Conventional diffusion process to form the emitter of a c-Si solar cell is a complicated process with high thermal as well as economic budget. An alternative to avoid this process is to form MIS/SIS structured solar cells, where different process is used to form the emitter portion of the cell. In this study, 3 × 3 (ITO-Al2O3-n-Si) structured SIS cell is developed, where n-Si is the base material, Al2O3 and ITO layer act as hole selective layer and emitter layer, respectively. Sputtered ITO layer of thickness 150 nm acts as a degenerative semiconductor as well as ARC. For ITO coated cell, average reflectance reduced to 4.54 % from 13.63% compared with only textured cell. Metallization is done using Ag on both the sides on the front side above the ITO layer and a continuous contact on the back side by vacuum coating unit. Apart from hole tunnelling, ALD grown very thin 1.5 nm layer of Al2O3 acts as a passivation layer and increases minority carrier lifetime from 9.732 S to 17.548 S. Achieved open circuit voltage (Voc) and short circuit current (Isc) are 684 mV and 35 mA, respectively. |
List of References |