Impact of Absorbing Layer Band Gap and Light Illumination on the Device Performance of a Single Halide Cs2TiX6 Based PSC
| Authors | K. Chakraborty1, S. Paul1 , U. Mukherjee2, S. Das3 |
| Affiliations |
1Advanced Materials Research and Energy Application Laboratory, Department of Energy Engineering, North-Eastern Hill University, Shillong793022 Meghalaya, India 2Department of Life Science, VTT College, Midnapore-721101 West Bengal, India 3Department of Electronics and Communication Engineering, IMPS College of Engg. and Tech., Malda 732103, West Bengal, India |
| Е-mail | paulsamrat17@gmail.com |
| Issue | Volume 13, Year 2021, Number 3 |
| Dates | Received 10 January 2021; revised manuscript received 15 June 2021; published online 25 June 2021 |
| Citation | K. Chakraborty, S. Paul, U. Mukherjee, S. Das, J. Nano- Electron. Phys. 13 No 3, 03009 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(3).03009 |
| PACS Number(s) | 42.70.Qs, 84.60.Jt |
| Keywords | Perovskite solar cell (2) , SCAPS-1D (22) , Photovoltaic (13) , Band gap (29) , Illumination. |
| Annotation |
A comprehensive study on impact of active layer band gap and light illumination on the device performance has been analyzed for the FTO/TiO2/Cs2TiX6/CuSCN/Ag based Perovskite Solar Cell (PSC) using the Solar Cell Capacitance Simulator – 1 Dimension (SCAPS-1D) simulator. The present design strategy of the device for optimizing the short circuit current (JSC, mA/cm2), power conversion efficiency (PCE, %) through the absorbing layer band gap variation, and light illumination spectrum has been studied at the optimal thickness, device temperature, and defect density. The value of the different parameters used in the device simulation has been taken from the previous work. From this study, it was revealed that Cs2TiBr6, and Cs2TiF6 absorbing layer based PSC device has recorded maximum PCE at the 1.80 eV band gap, whereas, for the Cs2TiI6, Cs2TiCl6 absorbing layer based PSC device has achieved maximum PCE at the 1.60 eV band gap. On the other side, optimum PCE can be achieved at 400 nm wavelength on the light illumination for the Cs2TiBr6, Cs2TiI6, and Cs2TiF6 absorbing layer based PSC. The Cs2TiCl6 absorbing layer based PSC device has recorded maximum PCE at 450 nm wavelength on the different light illumination. |
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List of References |
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