Structure and Magnetoresistive Properties of Three-layer Films Сo(1 – x)Crx/Cu/Co
| Authors | O.V. Bezdidko1, S.A. Nepijko1,2 , Yu.O. Shkurdoda1 , Yu.M. Shabelnyk1 |
| Affiliations |
1Sumy State University, 2, Rymsky-Korsakov St., 40007 Sumy, Ukraine 2Institute of Physics, Johannes Gutenberg University Mainz, 7, Staudingerweg, 55128 Mainz, Germany |
| Е-mail | y.shabelnyk@aph.sumdu.edu.ua |
| Issue | Volume 13, Year 2021, Number 3 |
| Dates | Received 30 March 2021; revised manuscript received 10 June 2021; published online 25 June 2021 |
| Citation | O.V. Bezdidko, S.A. Nepijko, Yu.O. Shkurdoda, et al., J. Nano- Electron. Phys. 13 No 3, 03042 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(3).03042 |
| PACS Number(s) | 68.35.bj, 68.60.Bs, 75.47.De |
| Keywords | Diffusion (11) , Anisotropic magnetoresistance, Giant magnetoresistance. |
| Annotation |
The paper presents experimental results concerning the structural-phase state, diffusion processes and magnetoresistive properties of three-layer films Сo(1 – x)Crx/Cu/Co/substrate (S) with Cr concentration in the upper layer up to 30at. %. It is shown that the phase composition of both as-deposited and thermostabilized at the temperature of 700 K film samples with the layer thickness of 1÷30 nm corresponds to αCo, f.c.c.(Cu) and α(Сo1 – xCrx). Studies of diffusion processes have shown that in the systems Сo(1 –x )Crx/Cu/Co/S the individuality of the layers is largely preserved both in the as-deposited state and after annealing at Ta = 700 K with the penetration of Cr atoms through the Cu layer. It was found that for as-deposited and annealed at temperatures of 400 and 550 K films Сo(1 – x)Crx/Cu/Co/S with cCr = 30 at. % in the upper layer, dF = 20÷30 nm and dN = 3÷15 nm there is an atypical character of the behavior of the field dependences of the magnetoresistance is due to the different values of the spin asymmetry coefficients of the ferromagnetic layers α |
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