Elemental-phase and Structural Investigations of the Polycrystalline Surfaces of β-Ga2O3-SnO2 System Compounds

Authors P.V. Galiy1 , V.I. Vasil′tsiv1, A.P. Luchechko1 , P. Mazur2 , T.M. Nenchuk1 , O.V. Tsvetkova1, І.R. Yarovets′1

1Ivan Franko Lviv National University, 50, Drahomanov Str., 79005 Lviv, Ukraine

2Institute of Experimental Physics, University of Wroclaw, 9, pl. Maxa Borna, 50-204 Wroclaw, Poland

Е-mail galiy@electronics.lnu.edu.ua
Issue Volume 10, Year 2018, Number 5
Dates Received 08 July 2018; revised manuscript received 22 October 2018; published online 29 October 2018
Citation P.V. Galiy, V.I. Vasil′tsiv, A.P. Luchechko et al., J. Nano- Electron. Phys. 10 No 5, 05039 (2018)
DOI https://doi.org/10.21272/jnep.10(5).05039
PACS Number(s) 68.47.Fg; 68.37.Ps; 82.80.Pv
Keywords 2β-Ga2O3-SnO2 system, X-ray photoelectron spectroscopy (3) , Elemental-phase study, Topography (2) , Atomic force microscopy (9) .

The polycrystalline semiconductor materials (PSM) of 2β-Ga2O3-SnO2 system were obtained by the me­thod of high-temperature solid-phase synthesis. Experiments have shown that the efficiency of the syn­thesis process in the 2β-Ga2O3-SnO2 system essentially depends on the method of the initial compound­sobtaining. The studies of the obtained PSM's surfaces for their possible application in electronic field devices and ones on Schottky barriers, for which the metal/semiconductor, metal/insulator/semiconductor interphase boundaries and their characteristics play a decisive role were conducted. Particularly elemental-phase composition and roughness of PSM's surfaces, which were investigated by an appropriate set of experimental methods – low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results obtained for the PSM 2β-Ga2O3-SnO2 system'ssurfaces are compared with the results from the surfaces of β-Ga2O3  single-crystal cleavages and indicate that the PSM surface is quite suitable for the manufacturing of semiconductorelectric field controlleddevices, such as metal/semiconductor, metal/insulator/semiconductor, with a metal control electrode, when one select the relatively smooth areas on the surface of PSM.

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