Elemental-phase and Structural Investigations of the Polycrystalline Surfaces of β-Ga2O3-SnO2 System Compounds
| Authors | P.V. Galiy1 , V.I. Vasil′tsiv1, A.P. Luchechko1 , P. Mazur2 , T.M. Nenchuk1 , O.V. Tsvetkova1, І.R. Yarovets′1 |
| Affiliations |
1Ivan Franko Lviv National University, 50, Drahomanov Str., 79005 Lviv, Ukraine 2Institute of Experimental Physics, University of Wroclaw, 9, pl. Maxa Borna, 50-204 Wroclaw, Poland |
| Е-mail | galiy@electronics.lnu.edu.ua |
| Issue | Volume 10, Year 2018, Number 5 |
| Dates | Received 08 July 2018; revised manuscript received 22 October 2018; published online 29 October 2018 |
| Citation | P.V. Galiy, V.I. Vasil′tsiv, A.P. Luchechko et al., J. Nano- Electron. Phys. 10 No 5, 05039 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(5).05039 |
| PACS Number(s) | 68.47.Fg; 68.37.Ps; 82.80.Pv |
| Keywords | 2β-Ga2O3-SnO2 system, X-ray photoelectron spectroscopy (3) , Elemental-phase study, Topography (2) , Atomic force microscopy (9) . |
| Annotation |
The polycrystalline semiconductor materials (PSM) of 2β-Ga2O3-SnO2 system were obtained by the method of high-temperature solid-phase synthesis. Experiments have shown that the efficiency of the synthesis process in the 2β-Ga2O3-SnO2 system essentially depends on the method of the initial compoundsobtaining. The studies of the obtained PSM's surfaces for their possible application in electronic field devices and ones on Schottky barriers, for which the metal/semiconductor, metal/insulator/semiconductor interphase boundaries and their characteristics play a decisive role were conducted. Particularly elemental-phase composition and roughness of PSM's surfaces, which were investigated by an appropriate set of experimental methods – low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results obtained for the PSM 2β-Ga2O3-SnO2 system'ssurfaces are compared with the results from the surfaces of β-Ga2O3 single-crystal cleavages and indicate that the PSM surface is quite suitable for the manufacturing of semiconductorelectric field controlleddevices, such as metal/semiconductor, metal/insulator/semiconductor, with a metal control electrode, when one select the relatively smooth areas on the surface of PSM. |
|
List of References English version of article |
Other articles from this number
1) Study of the Structural and Optical Properties of Dy Doped CdS Thin Films Deposited by Close-spaced Vacuum SublimationCdSDy [05001-1-05001-5]2) Formation of Powerful Multiharmonic Electromagnetic Wave by Two Stream Superheterodyne Klystron Free Electron Laser with Helical Electron Beam [05002-1-05002-8]
3) Molybdenum Disulfide Obtained by Template Method as an Electrode Material in Electric Energy Storage Devices [05003-1-05003-4]
4) Tribological Study of Molybdenum Nitrides Under the Effect of Vanadium [05004-1-05004-7]
5) Magnetic studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles [05005-1-05005-5]
6) Effects of Oxygen Interaction with PbTe Surface and Their Influence on Thermoelectric Material Properties [05006-1-05006-5]
7) Features of Photoacoustic Response Formation in Systems with Interface [05007-1-05007-4]
8) A Perspective on Zinc Oxide Based Diluted Magnetic Semiconductors [05008-1-05008-5]
9) The Effect of the Fractal Guest Subsystem on the Structure, Heat Capacity and Impedance Response of InSe Crystals Intercalated with Nickel [05009-1-05009-5]
10) Influence of Deposition Conditions of Thin Polymer Films in Vacuum on Their Dielectric Properties [05010-1-05010-6]
11) Influence of Annealing on the Structure of Ultrathin Gold Films on the Surface of Glass and CdS Substrates [05011-1-05011-6]
12) Computer Simulation on the Behavior of the TCO/n-a-Si:H Interface Solar Cells [05012-1-05012-4]
13) Development of Technology for Obtaining N4HNO3 Multilayer Granules with Nanostructured Porous Layers [05013-1-05013-4]
14) Investigation and Design of Novel Comparator in Quantum-dot Cellular Automata Technology [05014-1-05014-4]
15) Charge Based Quantization Model for Triple-Gate FINFETS [05015-1-05015-5]
16) Optical Characterization of Thin Films Poly (Ethylene Oxide) Doped with Cesium Iodide [05016-1-05016-4]
17) Long-range Passivation of Phosphorus Impurity Atoms by Pb-centers and the Emergence of Barriers for Electrons in n-type Porous Silicon [05017-1-05017-6]
18) Structural and Optoelectronic Properties of Polycrystalline CdS Thick Film Prepared by Screen Printing [05018-1-05018-4]
19) The Experimental Structure of a Wall Turbulent Flow under the Action of Thermal Radiation from a CO2-laser [05019-1-05019-5]
20) Fabrication of Room Temperature NO2 Gas Sensor based on Silver Nanoparticles-Decorated Carbon Nanotubes [05020-1-05020-6]
21) Nano Silicon Carbide’s Stacking Faults, Deep Level’s and Grain Boundary’s Defects [05021-1-05021-6]
22) Empirical Regularities of Change in Dynamic, Acoustic, Structural, Optical and Colorimetric Characteristics of Ionic Crystals with Debye Temperature [05022-1-05022-5]
23) A Simple Sonochemical Synthesis of Nanosized ZnO from Zinc Acetate and Sodium Hydroxide [05023-1-05023-4]
24) Circulation of the Reactive Energy of the Near Field of an Electric Dipole and its Transformation into the Active Energy of the Radiation Field [05024-1-05024-8]
25) Scandium-silicon Multilayer X-ray Mirrors with CrB2 Barrier LayersScSiCrB [05025-1-05025-6]
26) Structure and Electrophysical Properties of Double-component Film Alloys Based on Molybdenum and Iron or Nickel [05026-1-05026-4]
27) About Coherent Electron Transport in Nanocontacts “Nb – DNA – Nb” [05027-1-05027-5]
28) Electrical Properties of Heterostructures n-TiN/p-Cd3In2Te6 [05028-1-05028-5]
29) Optimize the Geometrical Parameters of Interdigital Micro-Electrodes Used in Bioimpedance Sensing System [05029-1-05029-4]
30) Entropy Evaluation of the Laser Cooling Process [05030-1-05030-5]
31) A Method of Minority Charge Carriers Basic Parameters Determination in Solid Matter [05031-1-05031-5]
32) Comparison of Piezoelectric and DC Motor Control Principles [05032-1-05032-4]
33) Oscillatory Magnetic Dynamics of a Nanoparticle Driven by an External field and Spin-polarized Current [05033-1-05033-5]
34) Structural and Electrical Properties of AgSbSe2 Thin Films with the Inclusion of Lead Chalcogenides [05034-1-05034-4]
35) Boosting CZTSSe Solar Cell Efficiency by Back Surface Field Layer [05035-1-05035-5]
36) The Electronic Band Structure of the BaSnO3 and SrSnO3 Perovskites Calculated within the GGA and GW Approaches [05036-1-05036-5]
37) Configurable Nanocircuits with Majority Logic [05037-1-05037-5]
38) Dip Coated ZnO Films for Transparent Window Applications [05038-1-05038-5]
39) Determination of the Grüneisen Parameter and the Explicit Part of the Anharmonicity of the Cu-Ni System by the X-ray Method [05040-1-05040-4]
40) (TiZr)N/(TiSi)N Maitilayer Nanostructured Coatings obtained by Vacuum Arc Deposition [05041-1-05041-5]
41) Doped СNTs for Removal and Monitoring of Li, Na, K, Zn, Cd, Hg Chromate Molecular Complexes: a DFT Computational Study [05042-1-05042-7]
42) Study of Ethylene Vinyl Acetate (EVA) Films used in Photovoltaic Modules [05043-1-05043-3]
43) Investigation of Absorber Layer Thickness Effect on CIGS Solar Cell in Different Cases of Buffer Layers [05044-1-05044-2]
44) Electrical Performance of CuInSe2 Solar Panels Using Ant Colony Optimization Algorithm [05045-1-05045-3]
45) Influence of the Bias Potential and the Pressure of the Nitrogen Atmosphere on the Structure and Properties of Vacuum-arc Coatings Based on the AlCrTiZrNbV High-entropy Alloy [05046-1-05046-5]
