Long-range Passivation of Phosphorus Impurity Atoms by Pb-centers and the Emergence of Barriers for Electrons in n-type Porous Silicon
| Authors | F.A. Ptashchenko |
| Affiliations |
State University “Odessa Maritime Academy”, 8, Didrikhson Str., 65029 Odessa, Ukraine |
| Е-mail | fed.ptas@gmail.com |
| Issue | Volume 10, Year 2018, Number 5 |
| Dates | Received 11 August 2018; revised manuscript received 22 October 2018; published online 29 October 2018 |
| Citation | F.A. Ptashchenko, J. Nano- Electron. Phys. 10 No 5, 05017 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(5).05017 |
| PACS Number(s) | 68.43.Bc, 82.65._r |
| Keywords | DFT calculations, Porous silicon (3) , Pb-centers, Coulomb blockade. |
| Annotation |
DFT calculations showed that the passivation of phosphorus impurity atoms in n-type porous silicon (n-PS) by surface silicon atoms with dangling bonds (pb-centers) can occur at large distances – up to 25 Å, that is, through dozens of atomic layers. The negative charge of the pb-centers, arising in this case, causes the appearance of regions of reduced potential and Coulomb barriers for free electrons in n-PS. This allows one to explain the low concentration of free charge carriers and the low conductivity of n-PS as compared to the original silicon substrate. |
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