Authors | Benslimane Hassane, Dennai Benmoussa |
Affiliations |
Physics and Semiconductors Devices Laboratory, Materials Science Departement, Tahri Mohammed University, BP. 417, Bechar, Algeria |
Е-mail | hassane_ben@yahoo.fr |
Issue | Volume 10, Year 2018, Number 5 |
Dates | Received 22 July 2018; revised manuscript received 24 October 2018; published online 29 October 2018 |
Citation | Benslimane Hassane, Dennai Benmoussa, J. Nano- Electron. Phys. 10 No 5, 05044 (2018) |
DOI | https://doi.org/10.21272/jnep.10(5).05044 |
PACS Number(s) | 84.60.Jt |
Keywords | Solar cell (51) , CIGS (11) , Buffer layer (2) , Efficiency (24) , AMPS-1D (10) . |
Annotation |
This study investigates the interplay between the absorber layer of Cu(In,Ga)Se2 solar cells and the buffer layer of these devices. Cu(In,Ga)Se2 devices with absorbers of different thicknesses and different buffer layers are simulated. We found that the reduction in thickness of the CIGS cell leads to decrease short-circuit current, it is the main cause of degradation photovoltaic conversion efficiency. It has been found that substitution of the CdS buffer layer by other materials such as ZnS can limit this performance degradation. |
List of References |